laser spike annealing laser spike annealing

LSA technology plays an enabling role to overcomingmanufacturing challenges for sub-20nm logic devices. To manage ever-tightening thermal budgets critical to device performance, we developed diffusionless super activation. pulsed laser deposition [91,92], . When: 1:00 p.m. 2:00 p.m. EST, 26 April 2022. 0000001815 00000 n - Short wavelength laser is optimum - mostly absorbs energy in the top few nm. ", Laser-annealing technology is about four decades old, but was generally considered to be incapable of handling the spatial nonuniformities on a semiconductor wafer full of varying device geometries. Witha strong commitment to education,CHESS provides experiences to students, educators and the public that make science familiar and accessible. Ultratech's LSA201 LSA system built on the highly customizable Unity Platform includes a patented micro chamber for full-wafer, ambient control for processing . Y. Wang, S. Chen, M. Shen, et al. Laser spike annealing is a high-temperature (above 1300 C) heat treatment technique that activates the dopants in GaN and repairs damage done during the implantation process. This becomes challenging for conventional annealing processes. The difference between lamp-based and laser-based annealing is a process that can be performed in nanoseconds vs. milliseconds. 0000006352 00000 n Manufacturers who need permanent markings for traceability typically have two options: dot peen marking or laser marking. To better understand the annealing windows, we developed an insitu characterization technique which matches well with laser annealing for combinatorial and highthroughput characterization; this capability significantly enhances the characterization kinetic dopant activation limitations of IIIV and IIIN materials. Low thermal budget processing by MSA provides a way to alleviate this issue. "We then match the size of that beam to the size of the dye, and so we are exposing a single dye in a single shot. The surface will look a little darker to you, the thicker the oxide layer gets the darker the surface will be. RTP uses lamp sources to heat the silicon very quicklyon the order of secondsto temperatures of about 1000C, Talwar said. The laser system, on the other hand, provides localized heating around the scanning beam. In conventional RTA, this requires T > 750C; such high T would lead to morphology degradation, excess diffusion, and higher resistivity. The junction depth, abruptness and resistance 2021 Cornell University Library | Privacy | Web Accessibility Assistance. Built on Veeco's customizable Unity Platform, LSA 101's scanning technology delivers fundamental advantages in . 0000000016 00000 n "So the work we have done is in developing processes to integrate the laser-annealing technology into a complementary metal-oxide semiconductor process," Talwar said. Within this profile the . 0000001279 00000 n Results show that the main contenders for the 45nm CMOS are SPER and . Under LSA, the activation of highdose implanted dopants was increased in both InGaAs and GaN to peak concentrations comparable (>80%) to the as-implanted dose. This knowledge allows better design of polymer annealing processes in applications such as directed self-assembly (DSA) and could open the door for block copolymer spatially templated chemistry using laser spike annealing. DOI: 10.1109/ASMC.2011.5898180 Corpus ID: 29379160; Laser spike annealing for nickel silicide formation @article{Hebb2011LaserSA, title={Laser spike annealing for nickel silicide formation}, author={J. P. Hebb and Yun Ran Wang and Shrinivas Shetty and J. T. Mcwhirter and David M. Owen and Michael Shen and Van Le and Jeffrey Mileham and David P. Gaines and Serguei Anikitchev and Shaoyin Chen . Advanced DRAM architectures need higher activation and shallow junctions that just cant be met with traditional annealing. These informations were used to train the AI algorithm for the automatic assessment of BCC parameters in the future. Figure 1a schematically shows the laser spike annealing procedure, where a focused laser beam from a 120 W infrared CO2 laser (=10.6 m) is swept across the sample. 0000004651 00000 n Similar to the laser spike annealing system, the LM7 is also based on two laser sources, but provides annealing on a much shorter, nanosecond scale - meaning far less heat is transferred. Technical details are considered proprietary, but the method basically involves shaping the output beam of a solid-state laser to provide uniform illumination for a step-and-repeat process. By tightly controlling the laser parameters, beautiful colors can be achieved, as can be seen in the image below. The colored look of the metal that has been processed through laser annealing can be explained by the thin-film interference phenomenon. Alan Jacobs from Mike Thompsons group and Clemens Liedel from Chris Obers group, both at the Department of Materials Science and Engineering, brought samples to CHESS D1 station for a detailed analysis of laser annealed traces. With MSA, junctions with enhanced activation and reduced diffusion can be obtained. Research revealed that line roughness caused by diffusion in the baking method is decreased, resulting in higher-fidelity image quality for lithographic patterns.2. Ultratech, Inc. Oct 22, 2012, 04:30 ET. A devices thermal budget is a time/temperature calculation. All Rights Reserved. Peak temperatures in the laser trace were chosen to be close or above the order-disorder temperature of the block copolymer. 2018Proposal/BTR deadline: 2/1/18. Focus on Laser Spike Annealing & AP Lithography tools. The thickness of the internal oxide layer is determined by the highest temperature reached by . Incorporating nitrogen into a high-k dielectric film can improve thermal stability, reliability, and EOT scaling. The impact of MSA on HKMG is thinner equivalent oxide thickness (EOT) due to reduced interfacial layer growth from a lower thermal budget. Ultratech's LSA101 laser spike anneal systems will be used for 40-nm and 28-nm production. Comments won't automatically be posted to your social media accounts unless you select to share. However, typical thermal annealing is slow, and polymers may degrade at high annealing temperature. Drastic FinFET performance improvement has been achieved with co-optimization of conformal doping, selective epitaxial growth, implantation and MSA. startxref SAN JOSE, Calif., Oct. 22, 2012 /PRNewswire/ -- Ultratech, Inc. (Nasdaq: UTEK ), a leading supplier of lithography and laser-processing systems used to . 0000001684 00000 n Below the 10nm technology node, new materials with enhanced transportation, such as SiGe/Ge and III-V compounds, may be needed to meet the performance requirements. The worlds rapid pivot to virtual everythingfrom work and school, to shopping, health care and entertainmentis straining our devices and data centers to their very limits. FIGS. 0000019967 00000 n The latter shows much slower ramp down. LSA creates highly activated, ultra-shallow junctions with near diffusion-less boundaries in silicon. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc. (A. M. Maxam and W. Gilbert, Methods of Enzymology, 1980, 65: 499-560), matrix-assisted laser desorption ionization time-of-flight (MALDI . The service requires full JavaScript support in order to view this website. CHESS is operated and managed for the National Science Foundation by Cornell University. The study shows that both disordering (Figure 3a) and ordering (Figure 3b) can be kinetically suppressed at sub-millisecond timescales. The junction depth, abruptness and resistance offered by each approach are balanced against device uniformity, deactivation and leakage. Alternatively, LSA uses a single narrow laser beam to heat the wafer surface from substrate temperature to the peak annealing temperature. FIGURE 1. For FinFET, low-k is important not only as an inter-Cu dielectric, but also as a transistor-level dielectric to minimize the parasitic capacitance arising from 3D topography. For As, concentration enhanced diffusion is observed but can be reduced with short dwell time. Using MSA instead of RTA results in more precise dopant profile control, higher dopant concentration at the interface and less potential silicide defectivity, due to the lower thermal budget. Patent Application Number is a unique ID to identify the METHODS FOR OVERLAY IMPROVEMENT THROUGH FEED FORWARD CORRECTION mark in USPTO. "The transition from an n-type doped area to a p-type doped area has to be as narrow as possible, and with the laser-annealing technology it can be made almost atomically abrupt. Recently, Ti re-emerged as an option for contact metal because of better thermal stability and potential lower SBH. However, typical thermal annealing is slow, and polymers may degrade at high annealing temperature. Goal is to outrun damage to the polymer by employing ultrafast heating and cooling rates. Some features of this site may not work without it. You wouldnt build a skyscraper without a strong core structure, would you? The method comprises: adopting a metal material composition of Pt/Ti/Au as an ohmic contact metal of the p-type gallium arsenide, alloying the metal material composition of Pt/Ti/Au for 1 minute at 375 DEG C, and forming the ohmic contact of the p-type gallium arsenide. The next steps will be to work with customers on demonstrating functioning circuits and on placing tools in the field. <]>> . LSA can be applied to form low Rc Ti/Si contact. 380v corn puff making machine. There are important differences between flash and laser approaches. Then we move on to the next dye and expose that. The splitting of the waves occurs by differential reflections. Conversely, for material annealed at high temperature for long enough duration, the resultant morphology is purely quench determined. of 10-8 -cm2 is used. SIMS profiles of Ga-doped (left) p+/n and As-doped (right) n+/p Ge junctions annealed by LSA. Copyright 2023 Veeco Instruments Inc. All Rights Reserved. Standard LSA used in front-end applications has Tpk ranging from 1050~1350C and tdwell from 0.2~2ms. This results in improved activation. - Thermal stress. It uses coherent optics to generate a longer, more focused laser beam at the wafer plane, increasing throughput by approximately 200% compared to its predecessor, the LSA100A. Based on laser-annealing technology developed at Stanford University (Stanford, CA) and Lawrence Livermore National Laboratory (Livermore, CA), engineers at Ultratech Stepper (San Jose, CA) have progressed to an alpha product level in a tool to fabricate significantly shallower and more abrupt transistor junctions than are currently available through rapid thermal processing (RTP). Our latest development is an LSA flash anneal process that achieves the highest temperature in the shortest amount of time. 0000002069 00000 n The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc. 0000002147 00000 n The user team acquired close to 100,000 images on a fast Pilatus 200k detector corresponding to 3 sample materials with ~40 laser traces each. individual spectra. Annealing is a thermal process used in the far front end of semiconductor device manufacturing to lower silicon resistance and activate dopants injected into crystalline layers for stress relaxation. By using our websites, you agree to placement of these cookies and to our. hXKSHWQNa9& l%j9Tx=Y|siZhX}A~dX'(pWjIYV%'ezdwp ShHH5N?99_@aTz;Yj* Dopant activation of Si-doped InGaAs and GaN heterostructure was studied using CO2 and laser diode annealing in sub-millisecond and millisecond timescale. See the image below. We place cookies on your device to give you the best user experience. Building devices at advanced process nodes to meet the needs of the digital transformation means taking a close look at processes every step of the way. Activation can be improved using MSA in combination with additional implantation. 442 0 obj <> endobj 0000005899 00000 n Different process gas can be introduced to accommodate various annealing and material engineering needs. Because laser-spike annealing (LSA) activates S/D dopants within local and selective areas in a short time, LSA has been extensively used to moderate thermal issues. How to assure the process repeatability, uniformity and precise control focused laser beam to avoid overlaps . In response to increasingly complex process demands, Veeco developed a dual beam technology which expands the application space of non-melt laser annealing and features a second low-power laser beam to enable low-temperature processing. The company's first commercial product based on the new LTP technology platform will be for laser spike annealing (LSA), which will enable ultra-shallow junction formations for multiple generations. \Ik.8p2h0,`j R3\s1aqfL\ *t60O!_|AA@0205e 3 a The modulus and hardness of the low-k films can be improved without adversely impacting the k value using MSA. Thermal annealing is necessary to repair implant damage and activate dopants in pre silicide implantation scheme, and to drive-in dopants in post silicide case. In addition to front-end and middle-of-line applications, there are also opportunities at the back-end. "At this point we have demonstrated enough results to show that these are solvable and that they have been solved with a couple of concepts. 0000005379 00000 n These properties are assured by the presence of a layer of chromium oxide that is created by a spontaneous process called passivation. There is, however, a limitation in the maximum activation level it can achieve. When using dual beam a second wider laser beam is incorporated to preheat the wafer. 0000019775 00000 n In positionin, Achieving Ultralow-Loss Photonics Array Alignment, About the Webinar. Our dual-beam technology was designed to eliminate the need for dopant deactivation. Typical temperature programs for spike and ash annealing are shown in Figs. Doping profiles have been . Peak temperatures in the laser trace were chosen to be close or above the order-disorder temperature of the block copolymer. 0000018725 00000 n 18, 697701 (2011). Join now to see all activity Experience Litho Equipment Engineer Thermo Fisher Scientific . Simulated temperature distribution in silicon substrate by millisecond nonmelt scanning laser (left) and flash lamp heating (right). Essentially, the temperature has to be high enough to activate the dopants, but not too high to overheat the device. 18, 697701 (2011). GaN Compounds; III-V Semiconductors; Raman Spectroscopy; Thermoreflectance; Chemical engineering; Thermal Imaging; Materials Science; Laser Annealing. A key advantage of LSA is its broad scalability and adaptability for different applications. In addition, LSA using multiple beams, which can control the depth of the activation area by using different wavelengths, is also being actively studied to anneal the confined area . 0000004092 00000 n 0000000016 00000 n www.laserfocusworld.com is using a security service for protection against online attacks. By keeping the laser spike duration very short (0.1-100 milliseconds), the technique is hypothesized to be short enough to avoid degradation of the GaN lattice itself. lAzMuC-NE/s0u)]s # Temperatures were calibrated using optical functions of bulk Si with effects of black-body radiation emission captured at longer wavelengths. A picture of the promising performance in terms of laser anneal for dopant activation is illustrated in Fig. Ultratech, Inc. Laser spike annealing and its application to leading-edge logic devices, Proceedings of 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2. Laser Spike Annealing for sub-20nm Logic Devices Jeff Hebb, Ph.D. Julyy, 10, 2014 1 NCCAVS Junction Technology Group Semicon West Meeting July 10, 2014. The waveforms of each of these reflections are out of phase and will have different wavelengths. In the new laser-annealing process, however, a solid-state laser source heats the silicon to its 1400C melting point in depths ranging from 50 to 1000 . ", https://www.facebook.com/pages/Laser-Focus-World/126899915297, https://www.linkedin.com/showcase/laser-focus-world, Meta-optics breakthrough makes hologram devices possible, BMF Announces High Throughput Micro-Precision 3D Printer, Boston Micro Fabrication (BMF) announced a new 3D printer, the microArch S350.. BMF specializes in 3D printers with extreme resolution, suitable for p, The Impact and Mitigation of Thermal Effects in High-Precision Laser Scan Heads, About the Webinar. Figure 1a schematically shows the laser spike annealing procedure, where a focused laser beam from a 120 W infrared CO2 laser (=10.6 m) is swept across the sample. *wu`:ILI$I%)$IJI$RI$S4\zA|SI%)$IJI$R8L AL +@S]6Xa.>BSIvb_GV}wk^~3w_C(w\Q_ %)Z]u|66}lye|M:D5A}4W{f.R`tk+#3"\6 ti_R*OM$YYT j2Bcpi5]:XMcu0. For short-wavelength 1.E-05 MSA tools such as Flash Anneal (FA) or diode laser annealing (a) (a) (DL) the WID temperature range can be anywhere from 100- 1.E-06 250oC, and is highly dependent on device layout. The LSA101 laser spike annealing (LSA) system enables critical millisecond annealing applications for the 28 nm node and beyond with a minimum dwell time of 200 s. :R*6+F]o8LQP(Z>&iQ(.`l"99`*\=!Xs/1j% "+r=J(LPIE$dJ-22k'r&.a0F_-,} 4` > endobj 444 0 obj <> endobj 445 0 obj <>/ColorSpace<>/Font<>/ProcSet[/PDF/Text/ImageB/ImageC]/ExtGState<>>> endobj 446 0 obj [/ICCBased 460 0 R] endobj 447 0 obj <> endobj 448 0 obj <>stream 0000003662 00000 n Ultratech acquired technology and a research team in 1994 from Lawrence Livermore Labs focused on developing a projection laser-anneal process. 0000001819 00000 n DOE Offi As the layer gets thicker, more light is absorbed (and less is reflected). "That process involved exposing a mask to a very uniform illumination and then projecting the mask upon the wafer.". Submitted by: Detlef Smilgies, CHESS and Alan Jacobs, Cornell University09/25/2016, Contact Us Personnel Only CUInfo Emergency Info Feedback Web Accessibility Help, The Cornell High Energy Synchrotron Source (CHESS), a national user facility, is supported by the National Science Foundation under award DMR-1332208. All rights reserved. Laser-spike annealing (LSA), developed by Cornell researchers backed by Semiconductor Research Corp. (Research Triangle, N.C.) , has already been tested for both 193-nanometer immersion lithography and 13-nm extreme ultra violet (EUV). Temperature profiles were carefully calibrated in the lab for different laser power levels and dwell times. Spike annealing was performed in a Mattson RTP sys-tem with a maximum temperature of 1000 C-1050 C. Figure 1a schematically shows the laser spike annealing procedure, where a focused laser beam from a 120 W infrared CO2 laser (=10.6 m) is swept across the sample. It is performed before the metal layers are added, and is instrumental in providing a structurally sound foundation for . This knowledge allows better design of polymer annealing processes in applications such as directed self-assembly (DSA) and could open the door for block copolymer spatially templated chemistry using laser spike annealing. LSA extended process space. By YUN WANG, Ph.D., Ultratech, San Jose, CA. The maximum temperature achieved by the surface is controlled by the intensity of the laser pulses, the speed at which the laser beam sweeps the surface and the line spacing between each consecutive passes of the laser beam. "The other thing that is critical to device fabrication is that the junctions have to be more abrupt," Talwar said. In this work, we will compare junction performance and integratablity of fast-ramp spike, flash, SPER and laser annealing down to 45nm CMOS. It is performed before the metal layers are added, and is instrumental in providing a structurally sound foundation for the device. The full width at half maximum of the laser trace is about mm wide, and can thus be resolved spatially with the x-ray microbeam of 15 m (Figure 1b). For laser spike annealing temperatures above 1000 C , mobility is found to degrade due to partial relaxation and dislocation formation in the Si _0.3 Ge _0.7 channel. The semiconductor industry is in the midst of one of the biggest transitions of its time. tion. 0000004157 00000 n The peak intensity and width are indicators for the quality of ordering attained during laser spike annealing. FIGURE 2. The peak intensity and width are indicators for the quality of ordering attained during laser spike annealing. (NIRvana 640ST, Princeton Instruments, 512 640 pixels). [1] Alan G. Jacobs, Clemens Liedel, Hui Peng, Linxi Wang, Detlef-M. Smilgies, Christopher K. Ober, and Michael O. Thompson, Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing, Macromolecules 49, 64626470 (2016). So, what does laser spike annealing (LSA) have to do with all of this? Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope. YUN WANG, Ph.D., is Senior Vice President and Chief Technologist of Laser Processing Ultratech, San Jose, CA. With dimensions approaching atomic scales, the need for low thermal budget processes offered by millisecond annealing (MSA) becomes more important to precisely control the impurity profiles and engineer interfaces. 0000004641 00000 n This process is automatic. Temperature profiles were carefully calibrated in the lab for different laser power levels and dwell times. Laser Spike Anneal (LSA) technology combines a continuous-wave (CW) laser with projection optics and active beam feedback controls (uniformity, temperature, dwell time) to enable the ultra shallow junction formation. [2] Ruipeng Li, Sterling Cornaby, Marleen Kamperman, and Detlef-M. Smilgies: "Nanocomposite Characterization on Multiple Length Scales Using SAXS", J. Synchrotron Rad. Laser annealing does not remove anything from a metal surface. Its also been used for the branding of automotive parts that are prone to rust, especially in the exhaust system. The difference in heat dissipation has a significant impact on the cooling rate, in particular, when long annealing or high intermediate (preheat) temperature is used. www.laserfocusworld.com is using a security service for protection against online attacks. Between dot peening, inkjet printing, laser marking, and printed labels, the right solution is not always obvious. Figure 1: (a) Laser spike annealing procedure and (b) microbeam GIXAXS characterization of the polymer film within an annealed trace. In such a case, minimizing within-die pattern effects and implementing within-wafer and wafer to-wafer temperature control becomes very important. Jacobs developed software for automatic analysis of these traces; this involved background fitting and integrating the intensity of the first order peaks (see Figure 2). Construction of Polypyrrole-Coated CoSe 2 Composite Material for Lithium-Sulfur Battery 5). Here, we demonstrate single scan laser spike annealing (ssLSA) on CdSe nanocrystal (NC) thin films as an experimental test bed to illustrate how the size-dependent photoluminescence (PL) emission can be tuned throughout the visible range and in spatially defined profiles during a single annealing step. The current alpha device has beam sizes of the order of 1 1 cm, but Talwar said the production model will handle dye sizes up to the current industry maximum of 26 34 mm. Meanwhile, the junction depth can be controlled by the low-temperature annealing process prior to the laser . 0000001599 00000 n Short dwell time is beneficial for reducing wafer warpage and litho misalignment, especially for devices with high strain. The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length LA along the long axis; heating at least a . Hence a single laser spike annealed trace provides a cross section of the thermal history of the annealing process. The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length L A along the long axis; heating at least a . PLAINVIEW, N.Y., Nov. 22, 2021 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (NASDAQ: VECO) today announced they have shipped the first LSA101 Laser Spike Annealing System from their new San Jose . Close. 2023 Endeavor Business Media, LLC. The invention discloses a method for preparing ohmic contact of p-type gallium arsenide. A promising path to lower Rc is interface engineering by dopant segregation using pre or post silicide implantation. The excitation laser beam (640 nm, continuous-wave, OBIS, Coherent) was expanded with . Jacobs developed software for automatic analysis of these traces; this involved background fitting and integrating the intensity of the first order peaks (see Figure 2). Passivation that occurs after the annealing process tends to deteriorate the marking on the steel. Annealing is used to induce softness, relieve internal stress, and to refine the structure. Installed at leading IDM's and Foundries globally, Veeco's LSA101 System is the preferred technology for high-volume manufacturing of advanced logic devices from the 40nm to 14nm nodes. Activation levels measured by SSRM, however, are lower for both samples, and the peak carrier concentration value increases only slightly upon spike annealing, going from ~2E20/cm 3 in sample D02 to ~2.2E20/cm 3 in sample D03. As technology nodes shrink to 5nm and 3nm, processes must be adapted to suit a tighter thermal budget. Laser annealing is very different from other laser marking mechanisms readLaser Etching, Engraving & Annealing: What'sthe Difference? The metal begins to oxidize internally. Therefore, the parameters of the writing and passivation need to be optimized in order to create a high-quality marking and ensure that the metal is still protected from corrosion. The cleaned FTO glasses were coated with a c-TiO 2 layer and then exposed to 450 C of annealing treatment . We pulse the laser. By replacing the 2nd RTA with a high temperature MSA (700~900C), it can reduce leakage as well as improve performance. (UTEK-G) SOURCE Ultratech, Inc. 0000002958 00000 n B,2[cYr[-WjBH=`*.0 u xt xDd?pDH;fB0A/20Mac2JiiP ^ 4MqXABPP03 T:@>.AAA%p]b`kn!G,4?)!`x]@osS In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. W:R9nsLvc{C"Nwc;sf={@ySY_[UYEN]@{'RS1q%}O> %7Q{Y:-1Z85@Rj X07? Figure 2: Typical microbeam GISAXS image and intensity profile integrated over the dashed white rectangle and after background subtraction. Laser annealing consists of the slow heating of metals with a laser beam. R. Colin Johnson, Laser-spike annealing could boost litho, EE Times, October 2012. https://www.eetimes.com/laser-spike-annealing-could-boost-litho/. Annealing and the Rate Distortion Problem Albert Parker, Tom\v Gedeon, . Schematic of the experimental setup for R C measurements via laser spike annealing. 461 0 obj <>stream 0000003433 00000 n xb```f``z B@1vq"F826_Z~'ERyl~tA}C^wm*E7#,Q"1)QyU466$,rx`|"W+fV!,auG'3xvG [@K;&)GE& Stainless steel is commonly used in the medical, automotive, food, energy and heavy industries, thanks to its resistance to corrosion and low chemical reactivity. Laser Spike Annealing of III-V Materials and Full-Field Thermal Imaging during Laser Spike Annealing With the laser system the polymer can be heated way past the temperature at which the polymer would decay if held at that temperature long enough. Laser Spike Annealing for FinFETs Jeff Hebb, Ph.D. Julyy, 11, 2013 1 NVVAVS West Coast JunctionTechnology Group Meeting July 11, 2013. So it is a step and repeat process, very much like a stepper.". (KrF) laser beam with a pulse duration of 38 ns. We continuously strive to improve our systems to meet continuously evolving requirements. $$''$$53335;;;;;;;;;; %% ## ((%%((22022;;;;;;;;;; h" ? The Infona portal uses cookies, i.e. Prezioso et al. xref Lower leakage and better surface morphology are also observed in hafnium-based, high-k films when annealed by a laser. Laser annealing consists of the slow heating of metals with a laser beam. In this article the terms LSA and MSA are used interchangeably.